1 p-channel 30-v (d-s) mosfet fea t ures ? halogen-free acc ording to iec 61249-2-21 available ?trenchfet ? pow er mosfet ? 100 % r g tested ? 100 % uis tested application s ? load sw itches - notebook pcs - desktop pcs p r oduct summary v ds (v) r ds(on) ( ) i d (a) d q g (typ.) - 30 0.0125 at v gs = - 10 v - 11.6 22 nc 0.018 at v gs = - 4.5 v - 10 notes: a. s u rface mounted o n 1" x 1" f r4 board. b. t = 10 s. c. maximum under steady state conditions is 85 c/w. d. based on t c = 25 c. absolute maximum ratings t a = 2 5 c, unless otherwise noted pa ram e ter symbol li mit un it d rain-source voltage v ds - 30 v gate-source v o ltage v gs 25 contin uou s drain current (t j = 150 c) t c = 25 c i d - 11.6 a t c = 70 c - 10.5 t a = 25 c - 8 . 7 a, b t a = 70 c - 7. 7 a, b pulsed drain current i dm - 50 contin uou s source-drain diode current t c = 25 c i s - 4.6 t a = 25 c 2.0 a, b av alanche current l = 0. 1 mh i as - 20 single-pulse av alanche energy e as 20 mj maxim u m power dissipation t c = 25 c p d 5.6 w t c = 70 c 3.6 t a = 25 c 2.5 a, b t a = 70 c 1.6 a, b operating j unction and storage temperature range t j , t stg - 55 to 150 c t h e r m a l resistance ratings p arameter symbol t ypic al maximum unit ma ximum junction-to-ambient a, c t 10 s r thj a 39 50 c/w maximum j unction-to-f oot steady state r th jf 18 22 s g d p-channel mosfet s s d d d s g d so-8 5 6 7 8 top v i ew 2 3 4 1 www.din-tek.jp dt m4407
2 no t e s : a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted param e ter sym bol t est con ditions min. typ. max. un it static drain-source breakdown v oltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temper ature coefficient ' v ds /t j i d = - 250 a - 31 mv/c v gs(t h) temperature co efficient ' v gs(th) /t j 5.5 gate-so urce threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 .0 - 3.0 v gate-source leakage i gss v ds = 0 v, v gs = 25 v 100 na z ero gate v oltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 5 on-state dr ain current a i d(o n ) v ds t - 10 v, v gs = - 10 v - 30 a drain-source on-state re sistance a r ds(on) v gs = - 10 v, i d = - 10 a 0.011 0.0125 : v gs = - 4.5 v, i d = - 7 a 0.012 0.018 f orward transconductance a g fs v ds = - 10 v, i d = - 10 a 23 s dynam i c b input capacita n ce c is s v ds = - 15 v , v gs = 0 v, f = 1 mhz 1960 pf output c apacitance c oss 380 rev erse t ransfer capacitance c rss 325 t otal gate charge q g v ds = - 15 v, v gs = - 10 v , i d = - 10 a 43 65 nc v ds = - 15 v, v gs = - 4.5 v , i d = - 10 a 22 33 gate-s ource charge q gs 6 gate-dr a in charge q gd 11 ga te re sistance r g f = 1 mhz 0.3 1.3 2.5 : tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 3 : i d # - 5 a, v gen = - 10 v, r g = 1 : 11 22 ns rise time t r 13 25 t ur n-off delaytime t d(off) 32 50 fa l l time t f 918 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 3 : i d # - 5 a, v gen = - 4.5 v, r g = 1 : 44 70 rise time t r 100 160 t ur n-off delaytime t d( off) 28 50 fa l l time t f 15 30 drain- so urce body diode characteristics continuous source-drain diode current i s t c = 25 c - 4.6 a pulse diode forw ard c urrent i sm - 50 body diode vo ltage v sd i s = - 2 a , v gs = 0 v - 0.75 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s, t j = 2 5 c 28 45 ns body diode reverse recovery charge q rr 20 40 nc re verse recovery fall time t a 13 ns reverse reco very rise time t b 15 z z z g l q w h n m s ' 7 0
3 typica l c har ac teri stic s 25 c, unless otherwise noted output characteristics on-resista n ce vs. drain current gate charge 0 10 20 30 40 50 60 012345 v ds - drain-to- so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 10 v thr u 5 v v gs =4 v v gs =3 v 0.00 0.01 0.02 0.03 0.04 0.05 0 102030 4 05060 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v 0 2 4 6 8 10 0 1020304 0 50 i d =10a - gate-to- so u rce v oltage ( v ) q g - total gate c harge (nc) v gs v ds =10 v v ds =20 v v ds =15 v transfer characteristics capacitance on-resis tance vs. junction temperature 0 1 2 3 4 5 012345 v gs - gate-to - so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 125 c v gs = 25 c v gs = - 55 c c rss 0 600 1200 1 8 00 2400 3000 0 6 12 1 8 24 30 c iss v ds - drain-to- so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on - r esistance r ds(on) v gs =-10 v i d =10a v gs = - 4.5 v www.din-tek.jp dt m4407
4 ty pi cal ch ara cteristics 25 c, unless otherwise noted source-drain dio d e forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 0.4 - 0.2 0.0 0.2 0.4 0.6 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-resistance vs. gate-to-source voltage s in gle pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to - so u rce v oltage ( v ) t j = 25 c t j = 125 c i d =10a 0 10 20 30 40 50 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 saf e operating area 0.01 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to- so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms 0 . 111 0 10 t a = 25 c single p u lse limited b yr ds(on) * 1s 10 s dc 100 www.din-tek.jp dt m4407
5 typica l c har ac teri stic s 25 c, unless otherwise noted * t he power dissipation p d is based on t j(max) = 150 c, using junction-to-case th ermal resi stance, and is more useful in settling the upper dis s i p at i on limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current der ating* 0 3 6 9 12 15 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) pow er, junction- to -foot 0.0 1.4 2. 8 4.2 5.6 7.0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w ) po wer dera ti ng, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er dissipation ( w ) www.din-tek.jp dt m4407
6 ty pi cal ch ara cteristics 25 c, unless otherwise noted normalized thermal tran sient imp edance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e t ransient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 5c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycl e = 0.5 0.02 normalized therm al tran sient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0 .5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e t ransient thermal impedance 1 0.1 0.01 0.02 single p u lse 0.05 www.din-tek.jp dt m4407
1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.5 1 0.01 4 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s package information www.din-tek.jp
1 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to ind e x application note www.din-tek.jp
1 disclaimer all prod uct, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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